| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon single crystal production method capable of highly precisely pulling a silicon single crystal up by specifying an initial liquid level with a high accuracy.SOLUTION: In production of a silicon single crystal by the Czochralski method, the level of molten silicon liquid before a seed crystal is made to contact with the molten silicon liquid is determined on the basis of the mass of polycrystal silicon and the three-dimensional shape of the inner surface of a silica glass crucible 11. The three-dimensional shape of the inner surface is determined: by moving an internal range finder 17 along but not in contact with the inner surface of the silica glass crucible 11; irradiating a laser beam obliquely onto the inner surface of the silica glass crucible 11 from the internal range finder 17 at a plurality of measurement points along its moving path; measuring an inner surface distance between the internal range finder 17 and the inner surface by detecting reflection light from the inner surface at each measurement point; and correlating the three-dimensional coordinates of each measurement point and the inner surface distance. |
