| 摘要 |
The drive current capability of a pull-down transistor and a pass transistor formed in a common active region may be adjusted on the basis of different strain levels obtained by providing at least one embedded semiconductor alloy in the active region, thereby providing a simplified overall geometric configuration of the active region. Hence, static RAM cells may be formed on the basis of a minimum channel length with a simplified configuration of the active region, thereby avoiding significant yield losses as may be observed in sophisticated devices, in which a pronounced variation of the transistor width is conventionally used to adjust the ratio of the drive currents for the pull-down and pass transistors. |
