| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for electric power, which is used by operating IGBT and MOSFET in parallel as a switching device, capable of miniaturizing the whole size.SOLUTION: Gate control signals from a first control circuit are given to respective gates of a first IGBT and a first MOSFET via a die pad extended from a first control circuit side to the vicinity of the first IGBT and the first MOSFET. The gate control signals from a second control circuit are given to the respective gates of a second IGBT and a second MOSFET via the die pad extended from a second control circuit side to the vicinity of the second IGBT and the second MOSFET. |
