SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a semiconductor substrate including a first conductive well impurity layer, a gate electrode on the first conductive well impurity layer, a first conductive channel impurity layer spaced apart from an upper surface of the semiconductor substrate and formed in the first conductive well impurity layer, a first conductive channel region disposed between the gate electrode and the first conductive channel impurity layer, and second conductive source and drain regions formed in the first conductive well impurity layer on both sides of the gate electrode. The concentration of a first conductive impurity in the first conductive channel impurity layer is higher than that of the first conductive channel region. Thus, high integration and electrical properties may be enhanced.