发明名称 半導体装置の製造方法及び半導体製造装置
摘要 PROBLEM TO BE SOLVED: To prevent supply of exposure light to photosensitive material from a side face of a semiconductor substrate when a predetermined pattern is formed by an exposure development process to the photosensitive material formed on a main face of the semiconductor substrate.SOLUTION: A method of manufacturing a semiconductor device includes the steps of: preparing a wafer 5 in which a conductive layer 2 and a negative resist 3 are formed in order on a surface of a wafer 1; applying a light shielding member 32 across a surface and a side face of the negative resist 3, at least at a part of an outer edge of the wafer 5; performing exposure on the negative resist 3; removing the light shielding member 32, and developing the negative resist 3.
申请公布号 JP5925940(B2) 申请公布日期 2016.05.25
申请号 JP20150094906 申请日期 2015.05.07
申请人 ラピスセミコンダクタ株式会社 发明人 進藤 正典
分类号 H01L21/027;G03F7/20;H01L21/288;H01L21/60 主分类号 H01L21/027
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