| 摘要 |
Provided is a semiconductor power module that has an excellent heat release property and that can be produced at a lower cost. A power semiconductor module includes semiconductor chips (an IGBT (328) and a diode (156)); conductor plates (315, 318) having surfaces on front and back sides wherein the semiconductor chips are electrically connected to the surfaces on either side and heat release surfaces are formed on the surfaces on the other side; sealing resin (348) that seals the conductor plates and the semiconductor chips in such a manner that the heat release surfaces are exposed; and heat release parts (307A, 307B) that are thermally in contact with the heat release surfaces of the conductor plates via the insulating layer (333), wherein the insulating layer (333) has thermally sprayed ceramic films (333A) on either the heat release surfaces or surfaces of the heat release parts (307A, 307B) facing the heat release surfaces, the thermally sprayed ceramic films (333A) being formed by spraying a mixture of aluminum nitride particles and alpha-aluminum oxide particles, and the thermally sprayed ceramic film (333A) has such a configuration that a sum of a volume percentage of aluminum nitride and a volume percentage of alpha-aluminum oxide is 30 % or more, and a cross-sectional porosity of 10 % or less. |
