| 摘要 |
The light receiving/emitting device uses an integrated light receiving/emitting element wherein a light receiving element and a light emitting element are provided on one main surface of a substrate. The substrate comprises a first-conductivity-type semiconductor. At least one electrode layer is placed in an area corresponding to at least the light receiving element and the light emitting element on the other main surface of the substrate. The light receiving element comprises: a first second-conductivity-type semiconductor layer formed on the one main surface of the substrate; a first anode electrode formed on the top surface of the first second-conductivity-type semiconductor layer; and a first cathode electrode formed on the top surface of the one main surface of the substrate. The electrode layer, the first anode electrode and the first cathode electrode have the same electric potential. |
