| 摘要 |
Provided is a method for fabricating a multi-trench structure, including steps of: performing anisotropic etching on a semiconductor substrate so as to form a vertical trench (100); growing a first epitaxial layer (110) on the semiconductor substrate in which the vertical trench (100) has been formed, so that the first epitaxial layer (110) covers the top of the vertical trench (100) to form a closed structure; performing anisotropic and isotropic etching on the closed structure, so as to form a trench array, and to make the trench array communicate with the vertical trench, the trench array including a number of trenches or vias, upper portions of a number of trenches or vias being separated from each other, and lower portions thereof communicating with each other to form a cavity (120); and growing a second epitaxial layer (130) to cover the trench array, so as to form a closed multi-trench structure. With two times of growth of the epitaxial layers, the multi-trench structure remains stable and solid in a fabricating process, which prevents phenomena of film breakage or falling off in the fabricating process. |
