A microwave plasma reactor for manufacturing synthetic diamond material

摘要

Microwave plasma reactor (MW-CVD) for chemical vapour deposition (CVD) is described. The plasma chamber 2 forms a resonant cavity 10 for supporting primary microwave resonance mode with a primary microwave resonance mode frequency (f). A number of microwave sources are coupled to the plasma chamber 10 to generate and feed microwaves with a total microwave power (PT) into the plasma chamber 2. A gas flow system 12,14 for feeding process gases into the plasma chamber and removing them is detailed, together with a substrate holder 16 located in the plasma chamber and comprising a supporting surface for supporting a substrate 18 on which the synthetic diamond material is to be deposited in use.