| 摘要 |
The present disclosure concerns a MLU cell (1) for sensing an external magnetic field, comprising a magnetic tunnel junction (2) including a sense layer (21) having a sense magnetization (210) adapted to be oriented by the external magnetic field; a reference layer (23) having a reference magnetization (230); a tunnel barrier layer (22); a biasing layer (27) having a biasing magnetization (270) and a biasing antiferromagnetic layer (26) pinning the biasing magnetization (270) substantially parallel to the pinned reference magnetization (230) at a low threshold temperature (T L ) and freeing it at a high threshold temperature (T H ); a biasing coupling layer (28) between the sense layer (21) and the basing layer (27) and configured for magnetically coupling the biasing layer (27) and the sense layer (21) such that the sense magnetization (210) is oriented substantially perpendicular to the pinned biasing magnetization (270) and to the pinned reference magnetization (230). The present disclosure further concerns a magnetic sensor device (100) for sensing an external magnetic field, comprising a plurality of the MLU cells (1). |
