| 摘要 |
PURPOSE:To attain the clean and complete removal of the photoresist in unnecessary parts by subjecting the 2nd photoresist pattern of a positive type on a completely thermally cured 1st photoresist pattern to full-surface exposing and removing only the 2nd photoresist pattern by a developing soln. CONSTITUTION:The 1st photoresist pattern 8 which is formed on a substrate 7 and is required to remain is heated and cured until the pattern becomes insoluble by the developing soln. and the photoresist film of the positive type is formed thereon and is subjected to patterning by exposing and developing, by which the 2nd photoresist pattern 9 is formed. After the desired pattern 10 is formed by plating or vacuum film forming, etc., the 2nd photoresist pattern 9 is subjected to full-surface exposing and is removed by the developing soln. Thus, the photoresist of the unnecessary part is more cleanly and completely removed exclusive of the photoresist film of the necessary part subjected to the high-temp. processing. |
