| 摘要 |
PURPOSE:To simplify a process by a method wherein a wafer is coated with a resist whose energy absorption coefficient is high, it is coated, so as to be piled up, with a resist whose energy absorption coefficient is low and an exposure operation and a developing operation are executed simultaneously. CONSTITUTION:A substrate 3 is coated with a resist 2 whose energy absorption coefficient is high so as to obtain a film thickness which is required to keep accuracy at an etching operation; in addition, it is coated thin with a resist 1 whose energy absorption coefficient is low. Then, this assembly is irradiated, via a mask pattern, with far ultraviolet rays 5 provided with an energy which is required to expose the resist 1 whose energy absorption coefficient is low; then, an exposure energy distribution is produced; a resist part 6 not exposed to light and a resist part 7 exposed to light are formed inside the resists 1, 2. In succession, a multilayer resist body is developed; then, a resist pattern which is obserbed in a residual-image resist 10 is formed on the substrate 3. Thereby, while advantage of a conventional multilayer resist such as a high resolution, an excellent size control property, a relaxation of a standing-wave effect, a relaxation of a scattering effect and the like are kept, it is possible to prevent that a process becomes complicated. |
