| 摘要 |
A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided. |
