| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a photoelectric conversion device having excellent electrical characteristics and to provide a method of manufacturing the same. <P>SOLUTION: On both surfaces of a single-crystal silicon substrate having one conductivity type, a crystal silicon region inheriting the atomic arrangement of the single-crystal silicon substrate and an i-type silicon semiconductor region containing amorphous silicon are formed, and then an impurity semiconductor region for forming a junction is formed on the i-type silicon semiconductor region, so that defects and the number of interfaces in a junction region is reduced, thereby improving carrier lifetime to form a photoelectric conversion device having excellent electrical characteristics. <P>COPYRIGHT: (C)2013,JPO&INPIT |
