发明名称 |
SUBSTRATE FOR HIGH-RESOLUTION ELECTRONIC LITHOGRAPHY AND CORRESPONDING LITHOGRAPHY METHOD |
摘要 |
In the field of very high-energy (50 keV or more) electron-beam lithography, a layer to be patterned by lithography is borne by a holding structure that comprises a substrate (for example made of silicon) and an intermediate layer made of a porous material of density lower than that of the same but non-porous material, this material, notably silicon or carbon nanotubes, having a low atomic number, lower than 32 and preferably lower than 20. This structure decreases the influence of backscattered electrons on high-resolution lithographic patterns. |
申请公布号 |
EP2883110(B1) |
申请公布日期 |
2016.05.25 |
申请号 |
EP20130745079 |
申请日期 |
2013.08.02 |
申请人 |
COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIESALTERNATIVES |
发明人 |
IMBERT, JEAN-LOUIS;CONSTANCIAS, CHRISTOPHE |
分类号 |
G03F7/40;G03F7/09;G03F7/11;G03F7/20 |
主分类号 |
G03F7/40 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|