| 摘要 |
To improve the mask of an EUV lithography apparatus in view of its high reflectivity, a reflective mask is suggested for EUV lithography having a reflective multilayer system on a substrate configured for a working wavelength in the EUV range and having stacks with layers of at least two materials with different real parts of the refractive index at the working wavelength, wherein the multilayer system (V) is configured such that, as it is irradiated with EUV radiation at a fixed wavelength and an angle interval between the smallest and the largest angle of incidence of up to 21°, the apodization is less than 30%. |
