发明名称 パターン形成方法
摘要 PROBLEM TO BE SOLVED: To achieve the formation of a pattern in a state where limitation is relieved, using a vertical cylinder phase structure formed by a microphase separation.SOLUTION: In a pattern formation method, a plasma oxidized layer 102 is formed on a surface of a substrate 101; a block copolymer thin film 103 comprising a block copolymer is formed on the plasma oxidized layer 102, the block copolymer comprising a first block chain and a second block chain having surface free energies different with each other; the block copolymer thin film 103 is heated to induce a microphase separation; a plurality of columnar phase structures 104 comprising the first block chain are formed on the block copolymer thin film 103; and the block copolymer thin film 103 is immersed into a process liquid 105 comprising an ammonium fluoride aqueous solution to form a plurality of openings 106.
申请公布号 JP5924779(B2) 申请公布日期 2016.05.25
申请号 JP20130180970 申请日期 2013.09.02
申请人 日本電信電話株式会社;国立大学法人東京工業大学 发明人 山口 徹;彌田 智一;長井 圭治;小村 元憲;村中 由夏
分类号 H01L21/3065;H01L21/027;H01L21/306 主分类号 H01L21/3065
代理机构 代理人
主权项
地址