LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME

摘要

The present invention relates to a light emitting device and a manufacturing method of the same and, more specifically, to a light emitting device, comprising: a first conductive type semiconductor layer; a second conductive type semiconductor layer; and an active layer interposed between the first and second conductive type semiconductor layers and having a plurality of V-pits. The light-emitting device further includes a layer-quality improving layer between the first and second conductive type semiconductor layers and having a V-pit with the virtually same size and shape as the V-pits of the active layer, wherein the layer-quality improving layer is a group III-V semiconductor layer including Al or In. According to the present invention, a light emitting property is enhanced, as layer quality of the light emitting device is improved.