| 摘要 |
The present application relates to an improved static random access memory (SRAM) device having a plurality of storage cells and a separate read/write circuit. Each of the plurality of storage cells is connected to a read/write data node of the read/write circuit by a dedicated connection, and an access switch which permits read/write access to the storage cell. The dedicated connection exhibits a greater capacitance than the read/write data node of the read/write circuit, such that the primary read mechanism of the SRAM is charge equalisation. The SRAM write data connection to the read/write node of the read/write circuit, to permit data to be written to the plurality of storage cells. Write assist techniques are disclosed which assist writing of a ‘1’ to the plurality of storage cells. |
