| 摘要 |
A method for simulating a placement of patterns by self-assembly of block copolymers in a contour printed on a plate by lithography includes: extraction of geometric parameters of the contour recorded in a memory; selection, by a processor having access to the memory, of at least one local extremum of an interference figure produced inside the contour on the basis of the geometric parameters of the contour by applying a model for propagation of waves interfering with one another; and provision, by the processor and on the basis of the local extremum, of parameters for placement of at least one pattern intended to be obtained by self-assembly of block copolymers within the contour. |
