| 摘要 |
The present invention provides a novel compound semiconductor which can be used as thermoelectric material, and a method for fabricating the same. According to the present invention, the compound semiconductor is a compound semiconductor comprising hetero metal and oxide, which can be represented as the following chemical formula 1. The chemical formula 1 is Bi_2Te_xSe_(a-x)M1_y(M1O)_zM2_b. In the chemical formula 1, M1 is one or more selected from a group comprising Zn, Mo, Sn, Zr, V and Nb; M1O is an N-type oxide of M1; M2 is one or more selected from a group comprising Cu, Pd, W, Mn, Co, Ag and Ni; and 2.5 < x < 3.0, 3.0 <= a < 3.5, 0 < y and 0 <= z, b < 0.1 are satisfied. |
