| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor element capable of suppressing unintended variation in characteristics of products. <P>SOLUTION: The method of manufacturing a semiconductor element includes a step in which product wafers 111-122 or a dummy wafer 110 is arranged at a plurality of semiconductor wafer charging positions P0-P12 arrayed toward a furnace opening from the depth of furnace, in an impurity diffusion furnace, and a step for flowing impurity gas in a lateral diffusion furnace in which the product wafers 111-122 and the dummy wafer 110 are arranged. A plurality of semiconductor wafers consisting of a part of or all the plurality of product wafers as well as at least one dummy wafer are taken as a wafer group. It is assumed that a surface of the semiconductor wafer facing the depth of furnace is a front surface, and a surface of the semiconductor wafer facing the opening of furnace is a rear surface. The rear surfaces of adjoining semiconductor wafers that face the front surfaces of the plurality of product wafers 111-122 in a common wafer group is the surface having the same structure. <P>COPYRIGHT: (C)2012,JPO&INPIT |
