HALFTONE PHASE SHIFT MASK USING DESTRUCTIVE INTERFERENCE EFFECT AND METHOD OF MANUFACTURING THE SAME

摘要

Disclosed are a halftone phase shift mask using a destructive interference effect which is capable of improving production yield through simplification of a mask preparing process by promoting a blinder effect only with a phase shift material layer using a destructive interference effect of light, and a method of preparing the halftone phase shift mask. A halftone phase shift mask using a destructive interference effect according to the present invention includes: a transparent substrate disposed to be spaced apart from each other as a matrix form and having a plurality of active areas each of which includes a transmission area such that light is transmitted and a phase shift area such that a light transmittance is controlled in the phase shift area, and a blind area which is disposed at the outside of the active areas; a phase shift pattern which is formed on the phase shift area on the transparent substrate to control transmittance of incident light; and hole-array patterns which are formed in the same material and thickness as those of the phase shift pattern on the blind area of the transparent substrate, and are disposed to be mutually spaced apart from each other. The phase shift pattern and the hole-array patterns are formed in a range satisfying the following expressions 1 and 2. Expression 1: k1 at the resolution formula is equal to a pattern size of less than 0.25. Expression 2: a light amount in which an amount of light going through the transmission area enters the panel is equal to a light amount in which light transmitting the phase shift pattern enters the panel.