| 摘要 |
According to an HEMT having a structure for leading an electrode to a surface of a chip by forming a via hole in an insulating layer on a gate electrode and inserting a lead electrode into the via hole, the lead electrode connected with the gate electrode causes damage to a semiconductor layer below the gate electrode, thereby not achieving stable electric properties and quality. To solve the above problem, according to an HEMT having a structure for leading an electrode to a surface by forming a via hole in an insulating layer on a gate electrode and inserting metal into the via hole, a lead electrode is not connected to a gate electrode on a gate opening area and connected to a gate electrode formed on an oxide film. Thus, stress applied to a semiconductor layer below the gate electrode is reduced such that the HEMT can obtain stale electric properties and reliability. |
