NONVOLATILE MEMORY DEVICE AND ERASING METHOD THEREOF

摘要

A method for erasing a nonvolatile memory device, which comprises a memory cell array which includes memory cells vertically stacked on a substrate and a ground selection transistor connected to each of the memory cells, includes a step of applying an erasing voltage to the substrate; a step of measuring the temperature of the memory cell array; a step of setting a delay time when the erasing voltage is applied to the substrate according to the temperature of the measured memory cell array; a step of applying a ground voltage to the ground selection line connected to the ground selection transistor during the delay time; and a step of raising the voltage of the ground selection line after the delay time. So, the reliability of an erasing operation can be implemented.