发明名称 VAPOR GROWTH DEVICE AND VAPOR GROWTH METHOD
摘要 PURPOSE: To provide a vapor growth device enhancing the productivity.CONSTITUTION: A vapor growth device includes n(n is an integer of 1 or more)reaction chambers for processing substrates, respectively, under a pressure less than atmospheric pressure, a cassette chamber having a cassette holding section where a cassette for holding a substrate can be installed, and the pressure of which can be reduced to a level less than atmospheric pressure, a transfer chamber provided between the reaction chamber and cassette chamber, and into which a substrate is conveyed under a pressure less than atmospheric pressure, and a substrate standby section capable of simultaneously holding n or more substrates processed in the reaction chamber, and provided in a region where the heatproof temperature is 500°C or more, and the pressure can be reduced less than atmospheric pressure.SELECTED DRAWING: Figure 1
申请公布号 JP2016086100(A) 申请公布日期 2016.05.19
申请号 JP20140218657 申请日期 2014.10.27
申请人 NUFLARE TECHNOLOGY INC 发明人 ITO HIDEKI;SATO YUSUKE
分类号 H01L21/205;C23C16/44;C23C16/54;H01L21/677 主分类号 H01L21/205
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