发明名称 |
SILICON/CARBON COMPOSITE AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon/carbon composite, capable of forming a homogeneous silicon-containing thin film on a surface of a conductive carbon material, and also to provide a silicon/carbon composite capable of achieving an increase in capacity of a power storage device and exhibiting favorable charge/discharge cycle characteristics when being used as a negative electrode material of a negative electrode for a power storage device.SOLUTION: A manufacturing method of a silicon/carbon composite according to the present invention includes: a step (a) of forming a carbon-containing thin film on a surface of a conductive carbon material by a chemical vapor deposition method (CVD) using carbon-containing gas; and a step (b) of, after the step (a), forming a silicon-containing thin film on the conductive carbon material by a chemical vapor deposition method (CVD) using silicon-containing gas.SELECTED DRAWING: Figure 3 |
申请公布号 |
JP2016085905(A) |
申请公布日期 |
2016.05.19 |
申请号 |
JP20140219080 |
申请日期 |
2014.10.28 |
申请人 |
L'AIR LIQUIDE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE |
发明人 |
PATRICK GINET;AURELIE DUMONT;OKUBO SEIGO |
分类号 |
H01M4/38;C01B31/02;C23C16/24;C23C16/26;H01G11/06;H01G11/30;H01M4/36 |
主分类号 |
H01M4/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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