发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions. |
申请公布号 |
US2016141243(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201514712136 |
申请日期 |
2015.05.14 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
YOU Jung-Gun;HSU Wei-Hua;LEE Choong-Ho;LEE Hyung-Jong |
分类号 |
H01L23/522;H01L27/088;H01L23/535;H01L27/092 |
主分类号 |
H01L23/522 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device comprising:
a substrate including a first region and a second region; a first transistor and a second transistor formed on the first region and the second region, respectively; a first contact formed on the first transistor; and a second contact formed on the second transistor, wherein the first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions. |
地址 |
Suwon-si KR |