| 摘要 |
A method for manufacturing a semiconductor device including a glass coating formation step, in which a ring-shaped electrode plate 18 having an opening of smaller diameter than the diameter of a semiconductor wafer W is installed between a first electrode plate 14 and a second electrode plate 16, the semiconductor wafer W is disposed between the ring-shaped electrode plate 18 and the second electrode plate 16, and a glass coating is formed on a planned glass coating formation surface in a state in which the ring-shaped electrode plate 18 is imparted with a potential lower than that of the second electrode plate 16. This method for manufacturing a semiconductor device makes it possible, even when performing a glass coating formation step using, as a semiconductor wafer, a semiconductor wafer in which a base insulation film is formed on the planned glass coating formation surface, to minimize any decrease in glass microparticle adhesion efficiency on the outer periphery part of the semiconductor wafer, and, therefore to manufacture a highly reliable semiconductor device at a high productivity. |
