发明名称 |
SEMICONDUCTOR ELEMENT CLEANING SOLUTION THAT SUPPRESSES DAMAGE TO COBALT, AND METHOD FOR CLEANING SEMICONDUCTOR ELEMENT USING SAME |
摘要 |
According to the present invention, it is possible to provide a cleaning solution which removes a dry etching residue on a surface of a semiconductor element that includes: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten; and an insulating film between low dielectric constant layers. The cleaning solution contains 0.001-7 mass % of an alkali metal compound, 0.005-35 mass % of a peroxide, 0.005-10 mass % of an anti-corrosion agent, 0.000001-1 mass % of an alkaline earth metal compound, and water. |
申请公布号 |
WO2016076033(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
WO2015JP78077 |
申请日期 |
2015.10.02 |
申请人 |
MITSUBISHI GAS CHEMICAL COMPANY, INC. |
发明人 |
OIE TOSHIYUKI;SHIMADA KENJI |
分类号 |
H01L21/304;C11D7/06;C11D7/10;C11D7/18;C11D7/32;C11D7/38 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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