| 摘要 |
A silicon carbide semiconductor switching element of insulated-gate structure comprising a planar metal-oxide film-semiconductor formed on a single-crystal n-type silicon carbide substrate (1) having a wider bandgap than silicon has a trench at a shallower depth than the depth of a source contact region (4) and a gate electrode (9) embedded and formed in the trench, wherein a top surface of the gate electrode (9) and a top surface of the source contact region (4) have substantially the same height so as to be flat. In this way, the structure eliminates an overhang of an inter-layer insulating film. |
