发明名称 |
VIRTUAL GROUND NON-VOLATILE MEMORY ARRAY |
摘要 |
A memory device with memory cell pairs each having a single continuous channel region, first and second floating gates over first and second portions of the channel region, an erase gate over a third portion of the channel region between the first and second channel region portions, and first and second control gates over the first and second floating gates. For each of the pairs of memory cells, the first region is electrically connected to the second region of an adjacent pair of memory cells in the same active region, and the second region is electrically connected to the first region of an adjacent pair of the memory cells in the same active region. |
申请公布号 |
WO2016077383(A2) |
申请公布日期 |
2016.05.19 |
申请号 |
WO2015US60010 |
申请日期 |
2015.11.10 |
申请人 |
SILICON STORAGE TECHNOLOGY, INC. |
发明人 |
TRAN, HIEU, VAN;NGUYEN, HUNG, QUOC;DO, NHAN |
分类号 |
H01L29/423;H01L27/115;H01L29/788 |
主分类号 |
H01L29/423 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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