发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a capacitance difference between capacitance of one capacitive element and capacitance of another capacitive element out of a paired capacitive elements in a semiconductor device.SOLUTION: A semiconductor device comprises: low-voltage-side wiring LWA, LWB which snake across a principal surface of a semiconductor substrate SUB in an X-direction; and high-voltage-side wiring HAW which faces the snaking low-voltage-side wiring LWA and high-voltage-side wiring HWB which faces the snaking low-voltage-side wiring LWB. The high-voltage-side wiring HWA, HWB have K-direction extension parts XA, XB which extend in the X-direction, respectively, and have Y-direction extension parts YA, YB which extend in a Y-direction, respectively. The Y-direction extension part YA proceeds toward a portion where the low-voltage-side wiring LWA recedes from the X-direction extension part XA, and the Y-direction extension part YB proceeds toward a portion where the low-voltage-side wiring LWB recedes from the X-direction extension part XB.SELECTED DRAWING: Figure 1
申请公布号 JP2016086090(A) 申请公布日期 2016.05.19
申请号 JP20140218267 申请日期 2014.10.27
申请人 RENESAS ELECTRONICS CORP 发明人 TOKIMINE YOSHIKAZU
分类号 H01L21/822;H01L21/3205;H01L21/768;H01L23/522;H01L27/04 主分类号 H01L21/822
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