PHOTORESIST PATTERN TRIMMING METHODS

摘要

Provided are methods of trimming photoresist patterns. The methods involve coating a photoresist trimming composition over a photoresist pattern, wherein the trimming composition includes a matrix polymer, a thermal acid generator and a solvent, the trimming composition being free of cross-linking agents. The coated semiconductor substrate is heated to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the matrix polymer in a surface region of the photoresist pattern. The photoresist pattern is contacted with a developing solution to remove the surface region of the photoresist pattern. The methods find particular applicability in the formation of very fine lithographic features in the manufacture of semiconductor devices.

主权项

1. A method of trimming a photoresist pattern, comprising, in sequence:
(a) providing a semiconductor substrate comprising one or more layers to be patterned on an upper surface thereof; (b) forming a photoresist pattern on the one or more layers to be patterned, wherein the photoresist pattern comprises a plurality of features and is formed from a chemically amplified photoresist composition, the photoresist pattern comprising a matrix polymer having acid labile groups; (c) coating a photoresist trimming composition over the photoresist pattern, wherein the trimming composition comprises a matrix polymer comprising one or more group chosen from —OH, hydroxyl styrene, hydroxyl naphthalene, hexafluoroisopropyl alcohol and combinations thereof, a thermal acid generator and a solvent, and wherein the trimming composition is free of cross-linking agents; (d) heating the coated semiconductor substrate to generate an acid in the trimming composition from the thermal acid generator, thereby causing a change in polarity of the photoresist matrix polymer in a surface region of the photoresist pattern; and (e) contacting the photoresist pattern with a developing solution to remove the surface region of the photoresist pattern.