| 发明名称 |
MAGNETIC MEMORY DEVICES AND METHODS OF FORMING THE SAME |
| 摘要 |
Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a contact plug, which includes a first crystalline region and an amorphous region located on the first crystalline region, and a magnetic tunnel junction pattern located on the amorphous region of the contact plug. |
| 申请公布号 |
US2016141490(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201514796022 |
申请日期 |
2015.07.10 |
| 申请人 |
JUNG Hyunsung;JEONG Daeeun |
发明人 |
JUNG Hyunsung;JEONG Daeeun |
| 分类号 |
H01L43/10;H01L43/02 |
主分类号 |
H01L43/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A magnetic memory device, comprising:
a contact plug including a first crystalline region and an amorphous region disposed on the first crystalline region; and a magnetic tunnel junction pattern disposed on the amorphous region of the contact plug. |
| 地址 |
Suwon-si KR |
