发明名称 |
METHOD AND APPARATUS FOR POWER DEVICE WITH DEPLETION STRUCTURE |
摘要 |
A semiconductor device is provided. The semiconductor device includes a substrate of a first conductivity type and an epitaxial structure of the first conductivity type disposed on the substrate. The semiconductor device further includes a well region having a first doping concentration of a second conductivity type disposed in the epitaxial structure and the substrate. The semiconductor device further includes a drain region and a source region respectively formed in the epitaxial structure inside and outside of the well region. The semiconductor device further includes a body region of the first conductivity type disposed under the source region, and a pair of first and second doped regions disposed in the well region between the drain region and the source region. The first and second doped regions extend outside of the well region and toward the body region. |
申请公布号 |
US2016141414(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201615007465 |
申请日期 |
2016.01.27 |
申请人 |
Vanguard International Semiconductor Corporation |
发明人 |
LIN Shin-Cheng;TU Shang-Hui;HO Yu-Hao;LIN Wen-Hsin |
分类号 |
H01L29/78;H01L29/08;H01L29/10;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsinchu TW |