| 发明名称 |
METAL SEGMENTS AS LANDING PADS AND LOCAL INTERCONNECTS IN AN IC DEVICE |
| 摘要 |
Methods for utilizing metal segments of an additional metal layer as landing pads for vias and also as local interconnects between contacts in an IC device and resulting devices are disclosed. Embodiments include forming source/drain and gate contacts connected to transistors on a substrate in an integrated circuit device, each contact having an upper surface with a first area; forming metal segments in a plane at the upper surface of the contacts, each metal segment being in contact with one or more of the contacts and having a second area greater than the first area; and forming one or more vias between one or more of the metal segments and one or more first segments of a first metal layer. |
| 申请公布号 |
US2016141291(A1) |
申请公布日期 |
2016.05.19 |
| 申请号 |
US201414540724 |
申请日期 |
2014.11.13 |
| 申请人 |
GLOBALFOUNDRIES Inc. |
发明人 |
WOO Youngtag;LEE Myungjun;KIM Ryan Ryoung-Han;KYE Jongwook |
| 分类号 |
H01L27/11;H01L23/522;H01L23/528;H01L27/02 |
主分类号 |
H01L27/11 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
forming source/drain and gate contacts connected to transistors on a substrate in an integrated circuit device, each contact having an upper surface with a first area; forming metal segments in a plane at the upper surface of the contacts, each metal segment being in contact with one or more of the contacts and having a second area greater than the first area; and forming one or more vias between one or more of the metal segments and one or more first segments of a first metal layer. |
| 地址 |
Grand Cayman KY |
