发明名称 |
Vorrichtung zum Ausbilden eines Siliciumcarbidhalbleiterfilms und Filmbildungsverfahren, welches diese verwendet |
摘要 |
In a silicon carbide semiconductor film forming apparatus, first to third gasses are introduced into first to third separation chambers through first to third inlets, respectively. The first and second gasses are silicon raw material including gas and carbon raw material including gas, and the third gas does not include silicon and carbon. The first and second gasses are independently supplied to growth space through first and second supply paths extending from the first and second separation chambers, respectively. The third gas is introduced through a third supply path from the third separation chamber between the first and second gasses. |
申请公布号 |
DE112014002916(T8) |
申请公布日期 |
2016.05.19 |
申请号 |
DE20141102916T |
申请日期 |
2014.06.19 |
申请人 |
DENSO CORPORATION;NuFlare Technology, Inc.;TOYOTA JIDOSHA KABUSHIKI KAISHA |
发明人 |
Fujibayashi, Hiroaki;Tsuchida, Hidekazu;Adachi, Ayumu;Naito, Masami;Ito, Masahiko;Kamata, Isaho;Ito, Hideki;Nishikawa, Koichi |
分类号 |
H01L21/205;C23C16/42;C23C16/455;C30B29/36 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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地址 |
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