| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor device capable of effectively suppressing electric field concentration at an end of a gate field plate part, and improving off-state withstand voltage.SOLUTION: A gate electrode 13 includes a base part 13a Schottky-coupled to the uppermost layer of a nitride semiconductor layer 10, and a gate field plate part 13b extending on a first insulating film 14 from an upper part of the base part 13a toward the drain electrode 12 side. A source electrode 11 includes a source field plate part 21 extending on an interlayer insulating film 16 toward the drain electrode 12 side so as to cover the gate electrode 13. A second insulating film 15 is formed at least on the first insulating film 14 and the gate electrode 13. An interlayer insulating film 16 made of a material containing at least SiOis formed on the second insulating film 15. The dielectric constant of the second insulating film 15 is set higher than the dielectric constant of the interlayer insulating film 16.SELECTED DRAWING: Figure 1 |
