| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning liquid and a cleaning method which are used in a cleaning step on a semiconductor device substrate, especially a semiconductor device substrate having, on its surface, metal wiring or cobalt for a barrier metal after CMP step, and which enables the achievement of adequate anticorrosion for the metal wiring or barrier metal and the achievement of the satisfactory cleaning of a substrate surface.SOLUTION: A cleaning liquid for a semiconductor device substrate comprises the following components (A)-(D), and is pH8 or higher: (A)a compound expressed by the general formula (1); (B)at least one compound selected from a group consisting of adenine, purine, guanine, hypoxanthine, xanthine, theobromine, caffeine, uric acid, isoguanine, and their derivatives; (C)a pH adjuster; and (D)water.SELECTED DRAWING: None |
