发明名称 |
NONVOLATILE MEMORY AND RELATED REPROGRAMMING METHOD |
摘要 |
A method of reprogramming a nonvolatile memory device, comprising setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines, supplying a program pulse to the selected memory cells, performing a program verify operation on the selected memory cells using the first and second latches, and performing a predictive program operation on the selected memory cells according to a result of the program verify operation. In the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells. |
申请公布号 |
US2016141036(A1) |
申请公布日期 |
2016.05.19 |
申请号 |
US201615007266 |
申请日期 |
2016.01.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM Tae-Young |
分类号 |
G11C16/10;G11C16/28;G11C16/34;G06F12/02 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
1. A method of reprogramming a nonvolatile memory device, comprising:
setting up bit lines of selected memory cells according to logic values of first and second latches of a page buffer connected to the bit lines; supplying a program pulse to the selected memory cells; performing a program verify operation on the selected memory cells using the first and second latches; and performing a predictive program operation on the selected memory cells according to a result of the program verify operation, wherein in the predictive program operation, bit lines of the selected memory cells are setup according to a logic value of a third latch of the page buffer that corresponds to each of the selected memory cells. |
地址 |
Suwon-si KR |