| 主权项 |
1. A pattern forming process comprising the steps of:
applying a resist composition onto a substrate, said resist composition comprising a polymer comprising recurring units having an acid labile group-substituted carboxyl group, an acid generator and an organic solvent, prebaking to form a resist film, exposing the resist film to high-energy radiation, baking the film, developing the exposed resist film in an organic solvent-based developer to form a negative pattern, applying a shrink agent onto the negative pattern, said shrink agent being a solution of a polymer comprising recurring units (a1) and/or (a2) having the general formula (1) in a solvent selected from the group consisting of ester solvents of 7 to 16 carbon atoms and ketone solvents of 8 to 16 carbon atoms, baking, and removing the excessive shrink agent with the organic solvent-based developer for thereby shrinking the size of spaces in the pattern,wherein R1 and R7 each are hydrogen or methyl,
R2 and R3 are each independently hydrogen, fluorine, or a straight, branched or cyclic, C1-C8 monovalent hydrocarbon group, R4, R8 and R10 are each independently hydrogen or a straight, branched or cyclic, C1-C20 monovalent hydrocarbon group in which any constituent —CH2— moiety may be replaced by —O— or —C(═O)—, or which may be substituted with halogen, R5 and R6 are each independently hydrogen or a straight, branched or cyclic, C1-C8 monovalent hydrocarbon group, or R5 and R6 may bond together to form a C3-C17 non-aromatic ring with the carbon atom to which they are attached, R9 is an acid labile group, X1 and X2 are each independently a straight, branched or cyclic, C1-C20 divalent hydrocarbon group in which any constituent —CH2— moiety may be replaced by —O— or —C(═O)—, k1 and k2 each are 0 or 1, 0≦a1≦1.0, 0≦a2≦1.0, and 0<a1+a2≦1.0. |
