PHOTON EMITTER CHARACTERIZATION USING PHOTOLUMINESCENCE QUENCHING IN NITROGEN VACANCY COLOR CENTERS

摘要

A crystal film with nitrogen vacancy centers is placed in close proximity to a photon emitter. Excitation illumination is produced to cause the nitrogen vacancy centers to produce photoluminescence. Illumination is produced by the photon emitter, which may be near field or far field and which quenches the photoluminescence intensity using an effect known as Stimulated Emission Depletion (STED). The quenching caused by the photon emitter is detected and analyzed to determine characteristics of the photon emitter. The analysis takes into account the characteristic dependence of the STED on the depletion light power, i.e. the photon source, and a spatial distribution of the light intensity. The analysis may be applied to spatially resolved measurements or an integral value of the photoluminescence quenching. The analysis may determine characteristics such as peak power, power scaling factor, and FWHM of the illumination profile of the photon emitter.

主权项

1. A method of determining one or more characteristics of a photon emitter, the method comprising:
producing excitation illumination that is incident on a crystal film with one or more nitrogen vacancy centers, wherein the one or more nitrogen vacancy centers produces photoluminescence with an intensity in response to the excitation illumination; producing illumination from the photon emitter, the illumination being incident on the crystal film with the one or more nitrogen vacancy centers, wherein the illumination produced by the photon emitter quenches the intensity of the photoluminescence from the one or more nitrogen vacancy centers; detecting an amount of quenching of the intensity of the photoluminescence from the one or more nitrogen vacancy centers caused by the illumination of the photon emitter; and analyzing the amount of quenching of the intensity of the photoluminescence to determine the one or more characteristics of the photon emitter.