| 摘要 |
The substrate processing method using plasma in the present invention is as follows. First, a gas for processing a substrate is provided into a chamber. First and second RF powers having different pulse frequency ranges are provided so that plasma is formed on top of a substrate disposed in the chamber. Here, a step of providing the first and second RF powers includes: providing the first and second RF powers by setting the number of pulsings and pulsing the first and second RF powers; and generating and providing as many pulses as the number of pulsings within an effective pulsing frequency range, which is a partial region of a pulse frequency of the first RF power and a pulse frequency of the second RF power. Accordingly, since the substrate processing method can control a plasma pulse without separate manipulations for sync pulses of high frequency power and low frequency power, the etching rate of a thin layer can be more accurately controlled and a bowing phenomenon can be prevented. |
