SILICON CARBIDE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which allows reduction of fluctuation in threshold voltage.SOLUTION: A silicon carbide semiconductor device 1 comprises a silicon carbide substrate 10, a gate insulation film 15, a gate electrode 27 and an interlayer insulation film 2. The interlayer insulation film 2 is provided to cover the gate electrode 27 and contacts the gate electrode 27. The interlayer insulation film 2 includes: a first insulation film 2a which contains a silicon atom and does not contain both a phosphorus atom and a boron atom; a second insulation film 2b which is provided on the first insulation film 2a and contains a silicon atom and at least one of a phosphorus atom and a boron atom; and a third insulation film 2c which contains a silicon atom and does not contain both a phosphorus atom and a boron atom. The second insulation film 2b has a first surface 2b1 which contacts the first insulation film 2a and a second surface 2b2 on the side opposite to the first surface 2b1, and a third surface 2b3 which links the first surface 2b1 and the second surface 2b2. The third insulation film 2c contacts at least one of the second surface 2b2 and the third surface 2b3.SELECTED DRAWING: Figure 1