SEMICONDUCTOR STRUCTURE WITH SILICON OXIDE LAYER HAVING A TOP SURFACE IN THE SHAPE OF CONTINUOUS HILLS AND METHOD OF FABRICATING THE SAME

摘要

A semiconductor structure is provided. The semiconductor structure includes a substrate, a silicon oxide layer disposed on the substrate, and at least part of a gate electrode covering the silicon oxide layer. A top surface of the silicon oxide layer is in the shape of plural hills. The silicon oxide layer can provide low on-state resistance for the semiconductor structure.

主权项

1. A semiconductor structure, comprising:
a substrate; a silicon oxide layer disposed on the substrate, wherein a top surface of the silicon oxide layer is in a shape of plural hills, and a valley is disposed between each two adjacent hills; and at least part of a gate electrode covering at least one of the hills and the valley.