发明名称 SEMICONDUCTOR IMAGE SENSOR MODULE, METHOD FOR MANUFACTURING THE SAME AS WELL AS CAMERA AND METHOD FOR MANUFACTURING THE SAME
摘要 A semiconductor image sensor module 1 at least includes a semiconductor image sensor chip 2 having a transistor forming region on a first main surface of a semiconductor substrate and having a photoelectric conversion region with a light incident surface formed on a second main surface on the side opposite to the first main surface and an image signal processing chip 3 for processing image signals formed in the semiconductor image sensor chip 2, wherein a plurality of bump electrodes 15a are formed on a first main surface, a plurality of bump electrodes 15b are formed on the image signal processing chip 3, both the chips 2 and 3 are formed to be laminated through heat dissipating means 4 and the plurality of bump electrodes 15a of the semiconductor image sensor chip 2 and the plurality of bump electrodes 15b on the image signal processing chip 3 are electrically connected.
申请公布号 US2016141324(A1) 申请公布日期 2016.05.19
申请号 US201615008077 申请日期 2016.01.27
申请人 Sony Corporation 发明人 Yoshihara Ikuo;Yamanaka Masamitsu
分类号 H01L27/146;H01L31/024 主分类号 H01L27/146
代理机构 代理人
主权项 1. An imaging unit comprising: a back-illuminated semiconductor image sensor including a first substrate coupled to a second substrate, the first substrate including an image sensor and the second substrate including an image processing unit, wherein a first electrode and a second electrode are formed on a first surface of the first substrate, a third electrode and a fourth electrode are formed on a first surface of the second substrate, an intermediate layer is formed between the first substrate and the second substrate, the first electrode is electrically connected to the third electrode through the intermediate layer by a first conductive electrode formed in a first through-hole, the second electrode is electrically connected to the fourth electrode through the intermediate layer by a second conductive electrode formed in a second through-hole, the intermediate layer includes a heat dissipating unit, the heat dissipating unit is formed of a heat-conducting layer formed of a heat-conducting material, and the intermediate layer further includes a heat-insulating layer formed of a heat-insulative material, the heat-conducting layer is between the first surface of the first substrate and the heat-insulating layer.
地址 Tokyo JP