发明名称 |
CREATION OF HYPERDOPED SEMICONDUCTORS WITH CONCURRENT HIGH CRYSTALLINITY AND HIGH SUB-BANDGAP ABSORPTANCE USING NANOSECOND LASER ANNEALING |
摘要 |
In one aspect, a method of processing a semiconductor substrate is disclosed, which comprises incorporating at least one dopant in a semiconductor substrate so as to generate a doped polyphase surface layer on a light-trapping surface, and optically annealing the surface layer via exposure to a plurality of laser pulses having a pulsewidth in a range of about 1 nanosecond to about 50 nanoseconds so as to enhance crystallinity of said doped surface layer while maintaining high above-bandgap, and in many embodiments sub-bandgap optical absorptance. |
申请公布号 |
WO2016077587(A2) |
申请公布日期 |
2016.05.19 |
申请号 |
WO2015US60385 |
申请日期 |
2015.11.12 |
申请人 |
PRESIDENT AND FELLOWS OF HARVARD COLLEGE |
发明人 |
MAZUR, ERIC;FRANTA, BENJAMIN;AZIZ, MICHAEL, J.;PASTOR, DAVID |
分类号 |
H01L21/223 |
主分类号 |
H01L21/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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