发明名称 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element and a semiconductor device that have a high reliability.SOLUTION: A semiconductor element comprises: a first layer 1 having a first principal surface; an electrode 2 formed on the first principal surface 1A; a protection film 3 having an opening on a surface of the electrode 2 and formed so as to cover at least an end part of the electrode 2; and a front metal film 4 formed on the electrode 2 in the opening. In a region adjacent to the protection film 3 on a surface 4A of the front metal film 4, a first coating film 6 that has a solder wettability lower than that of the front metal film 4 is formed.SELECTED DRAWING: Figure 1
申请公布号 JP2016086069(A) 申请公布日期 2016.05.19
申请号 JP20140217583 申请日期 2014.10.24
申请人 MITSUBISHI ELECTRIC CORP 发明人 FUJITA ATSUSHI
分类号 H01L21/60;H01L21/28;H01L23/48 主分类号 H01L21/60
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