ELECTRONIC MEMORY DEVICE AND TEST METHOD OF SUCH A DEVICE

摘要

The electronic memory device comprises a non-volatile memory matrix organized in rows and columns, an address decoder with address input lines for selecting a row according to a particular address given on the address input lines. Additional address mask input lines are provided, each address mask input line being assigned to an address input line, wherein an address mask input line in activated state has the effect of ignoring the assigned address input line. The method for testing said electronic memory device is performed with a significant lower number of read/write operations, since by ignoring a particular address line a plurality of write operations can be performed simultaneously.

主权项

1. A method for testing an electronic memory device, the electronic memory device comprising:
a memory matrix organized in rows and columns, the memory matrix having memory cells, wherein the cells of one row are forming one or more memory words; an address decoder with address input lines for selecting a row according to a particular address given on the address input lines, the address defined by fixed number of bits; read/write lines for reading/writing at least one word of a row selected by the particular address; additional address mask input lines, each address mask input line assigned to an address input line, wherein an address mask input line in activated state has the effect of ignoring the assigned address input line; the method for testing one particular bit of the address other than the lowest bit of the address comprising the steps of: A) erasing the memory matrix by putting all address mask input lines into an activated state; B) putting all address mask input lines in an activated state except the particular bit of the assigned address mask input line to ignore all bits of the address except the particular bit to be tested; C) setting the particular bit of the address to 0; D) performing a write operation with a same dedicated word for different selected lines; E) reading at least the first row 0 and the highest column; F) comparing the read values of first row 0 and the highest column with a pattern defined by the written dedicated word and an initial value; G) in case step F), the comparison disclosing a difference mark the electronic memory device as defective.